SILPHYDE
Physical Simulation of Electronic and Optoelectronic Devices
- Permanent Staff: L. Baudry (MCF), M. Charef (MCF), C. Dalle (CR), F. Dessenne (MCF), J.-L. Thobel (CR).
- Non Permanent Staff : T. Sadi (Post Doc)
The aim of this recently created group is to develop physical models and to implement them into “home made” simulators of modern electron devices. A wide range of softwares allows us to consider a variety of devices and phenomena. However, whenever possible, we try to associate them into “multiphysics” simulators. The main research activities the group is involved in are :
Monte Carlo simulation of electronic and optoelectronic devices.
- We have developed a Monte Carlo model of electron transport in Quantum Cascade Lasers. It has been applied in particular to the study of devices emitting in the terahertz frequency region. The coupling of electrons and photons is also considered, allowing us to describe laser operation in static and dynamic condition.
- We are currently developing a 3D Monte Carlo simulator of nanodevices. Applications range from ballistic devices such as Y switches to devices based on III-V nanowires.
Physical macroscopic modelling of devices and circuits.
We have developed of a 2D time domain electromagnetic simulator, coupled to transport models derived from the Boltzmann equation. The first applications will be focused on THz devices based on wave propagation.
Simulation of ferroelectric thin films and nanostructures,
in view of application as micro and nanoscale memories. The model is based on a self-consistent resolution of Ginzburg-Landau, Landau-Khalatnikov and Maxwell equations. Further development includes the investigation of electric conduction in ferroelectric systems.
